RTD/CMOS nanoelectronic circuits: thin-film InP-based resonant tunneling diodes integrated with CMOS circuits
| Autor: | J.I. Bergman, J. Chang, Y. Joo, B. Matinpour, J. Laskar, N.M. Jokerst, M.A. Brooke, B. Brar, E. Beam |
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| Rok vydání: | 1999 |
| Předmět: |
Materials science
Comparator business.industry Electrical engineering Hardware_PERFORMANCEANDRELIABILITY Capacitance Electronic Optical and Magnetic Materials Parasitic capacitance CMOS Hardware_GENERAL Low-power electronics Hardware_INTEGRATEDCIRCUITS Optoelectronics Hardware_ARITHMETICANDLOGICSTRUCTURES Electrical and Electronic Engineering Circuit complexity business Hardware_LOGICDESIGN Diode Electronic circuit |
| Zdroj: | IEEE Electron Device Letters. 20:119-122 |
| ISSN: | 1558-0563 0741-3106 |
| Popis: | The combination of resonant tunneling diodes (RTDs) and complementary metal-oxide-semiconductor (CMOS) silicon circuitry can offer substantial improvement in speed, power dissipation, and circuit complexity over CMOS-only circuits. We demonstrate the first integrated resonant tunneling CMOS circuit, a clocked 1-bit comparator with a device count of six, compared with 21 in a comparable all-CMOS design. A hybrid integration process is developed for InP-based RTDs which are transferred and bonded to CMOS chips. The prototype comparator shows sensitivity in excess of 10/sup 6/ VIA, and achieves error-free performance in functionality testing. An optimized integration process, under development, can yield high-speed, low power circuits by lowering the high parasitic capacitance associated with the prototype circuit. |
| Databáze: | OpenAIRE |
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