The sensitivity of the electron transport within bulk wurtzite indium nitride to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient: an updated Monte Carlo analysis
| Autor: | B. E. Foutz, Stephen K. O’Leary, Lester F. Eastman, Michael Shur |
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| Rok vydání: | 2009 |
| Předmět: |
Electron mobility
Materials science Indium nitride Condensed matter physics Computer simulation Doping Monte Carlo method Condensed Matter Physics Electron transport chain Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Condensed Matter::Materials Science chemistry.chemical_compound chemistry Phenomenological model Electrical and Electronic Engineering Wurtzite crystal structure |
| Zdroj: | Journal of Materials Science: Materials in Electronics. 21:218-230 |
| ISSN: | 1573-482X 0957-4522 |
| DOI: | 10.1007/s10854-009-9896-1 |
| Popis: | Using a semi-classical three-valley Monte Carlo simulation approach, we analyze the steady-state and transient electron transport that occurs within bulk wurtzite InN using a revised set of material parameters, this revised set of parameters taking into account recently observed InN phenomenology. In particular, we examine how the steady-state and transient electron transport that occurs within bulk wurtzite InN changes in response to variations in the crystal temperature and the doping concentration. The sensitivity of these results to variations in the non-parabolicity coefficient is also examined. |
| Databáze: | OpenAIRE |
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