Highly ordered catalyst-free InGaN/GaN core–shell architecture arrays with expanded active area region
| Autor: | Sang Yun Kim, Byung Oh Jung, Dong-Seon Lee, Yoshio Honda, Hiroshi Amano, Jeong Yong Lee, Yoshihiro Kato, Seunga Lee, Si-Young Bae |
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| Rok vydání: | 2015 |
| Předmět: |
Photoluminescence
Materials science Renewable Energy Sustainability and the Environment business.industry Nanowire Cathodoluminescence Gallium nitride law.invention chemistry.chemical_compound chemistry law Optoelectronics General Materials Science Light emission Metalorganic vapour phase epitaxy Electrical and Electronic Engineering business Luminescence Light-emitting diode |
| Zdroj: | Nano Energy. 11:294-303 |
| ISSN: | 2211-2855 |
| DOI: | 10.1016/j.nanoen.2014.11.003 |
| Popis: | Highly ordered, position-controlled gallium nitride (GaN) nanowire based multiple-quantum-wells (MQWs) core–shell architecture arrays are synthesized by metalorganic chemical vapor deposition (MOCVD). We investigate the possibility of using GaN nanowire arrays as a basal template for the growth of In x Ga 1− x N/GaN MQWs. The MQWs on three different crystal facets ( c -, m -, and semipolar -plane) of GaN nanowire exhibit dissimilar structural properties. The structural characteristics of InGaN/GaN core–shell arrays are inspected by cross-sectional high-resolution transmission electron microscopy (HR-TEM). We also investigate the optical properties of MQW core–shell structure nanoarrays. The luminescent characteristics of InGaN/GaN core–shell structure arrays are determined by photoluminescence (PL) and cathodoluminescence (CL) measurements. The monochromatic CL images clearly show the light emission behavior of InGaN/GaN MQW coaxial structure. Two distinguishable light emission peaks were observed in the GaN nanowire based core–shell structure. The characteristic of light emission mainly depends on the properties of MQWs, which are generated from different crystal facets of GaN. In addition, the light emission intensity shows different behaviors depending on the area of the GaN nanowire m -plane. The results of this study suggest that GaN nanowire arrays can be used as a good alternative basal template for next-generation light-emitting diodes (LEDs). |
| Databáze: | OpenAIRE |
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