Properties of surface and interface structure of AlN/3C–SiC/Ge/Si (111) heterostructure
| Autor: | Joerg Pezoldt, Pierre Masri, Ch. Zgheib, Richard Nader, Michel Kazan |
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| Rok vydání: | 2009 |
| Předmět: |
Materials science
Silicon business.industry chemistry.chemical_element Heterojunction Substrate (electronics) Condensed Matter Physics Inorganic Chemistry chemistry.chemical_compound Crystallography Full width at half maximum chemistry Materials Chemistry Silicon carbide Surface roughness Optoelectronics Thin film business Molecular beam epitaxy |
| Zdroj: | Journal of Crystal Growth. 311:4665-4669 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2009.08.034 |
| Popis: | AlN thin films were grown at a temperature of 720 °C on (1 1 1) silicon carbide buffer layer deposited in turn on (1 1 1) silicon substrate by introducing Ge at the SiC/Si interface. The growth method used is the solid source molecular beam epitaxy (SSMBE). The morphological and structural properties of the AlN epilayers before and after Ge deposition were studied by atomic force microscopy and X-ray diffraction. It is found that the formation of oriented grain becomes more favorable by increasing Ge quantity at the interface. The surface roughness (RMS) values of the AlN thin films decreases as Ge amount increases at the substrate surface. XRD studies show that wurtzite-type AlN structure with (0 0 0 2) orientation becomes favorable with increase in Ge amount and the full width at half maximum of AlN (0 0 0 2) rocking curve reaches its minimum with 1 ML of Ge concentration. |
| Databáze: | OpenAIRE |
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