Wafer-scale production of patterned transition metal ditelluride layers for two-dimensional metal–semiconductor contacts at the Schottky–Mott limit

Autor: Yeoseon Sim, Do Hee Lee, Yinan Liu, Jung Hwa Kim, Woongki Na, Shili Yan, Hyeonsik Cheong, Se-Yang Kim, Jaewon Wang, Jinsung Kwak, Zonghoon Lee, Seunguk Song, Soon-Yong Kwon, Jian-Hao Chen, Jung-Woo Yoo, Inseon Oh
Rok vydání: 2020
Předmět:
Zdroj: Nature Electronics. 3:207-215
ISSN: 2520-1131
DOI: 10.1038/s41928-020-0396-x
Popis: A key challenge in the development of two-dimensional (2D) devices is the fabrication of metal–semiconductor junctions with minimal contact resistance and depinned energy levels. An ideal solution for practical applications is to make contacts between 2D van der Waals semiconductors and 2D van der Waals metals. Here we report the wafer-scale production of patterned layers of metallic transition metal ditellurides on different substrates. Our tungsten ditelluride and molybdenum ditelluride layers, which are grown using a tellurization process applied to a precursor transition metal layer, have an electronic performance comparable to that of mechanically exfoliated flakes and can be combined with the 2D semiconductor molybdenum disulfide. The resulting metal–semiconductor junctions are free from significant disorder effects and Fermi-level pinning, and are used to create monolayer molybdenum disulfide field-effect transistors. The Schottky barrier heights of the devices also largely follow the trend of the Schottky–Mott limit. Two-dimensional metallic WTe2 and MoTe2 layers can be combined with a semiconducting MoS2 monolayer to create metal–semiconductor junctions that are free from substantial disorder effects and Fermi-level pinning.
Databáze: OpenAIRE
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