Leakage current characteristics of offset-gate-structure polycrystalline-Silicon MOSFET's
| Autor: | Osamu Kogure, Bunjiro Tsujiyama, Shunji Seki |
|---|---|
| Rok vydání: | 1987 |
| Předmět: |
Materials science
Silicon business.industry Electrical engineering chemistry.chemical_element engineering.material Electronic Optical and Magnetic Materials Polycrystalline silicon chemistry Depletion region Electric field MOSFET engineering Optoelectronics Field-effect transistor Electrical and Electronic Engineering Electric current business Voltage |
| Zdroj: | IEEE Electron Device Letters. 8:434-436 |
| ISSN: | 0741-3106 |
| DOI: | 10.1109/edl.1987.26684 |
| Popis: | Leakage current characteristics of offset-gate-structure polycrystalline-silicon (poly-Si) MOSFET's are studied as a function of dopant concentration N off in offset-gate regions. Leakage current markedly decreases from 1 × 10-9to 2 × 10-11A at V D = 10 V as N off is varied from 1 × 1018to 1 × 1017cm-3. A maximum ON/OFF current ratio of 108is obtained at 1 × 1017cm-3. Calculations based on a quasi-two-dimensional model indicate that the reduction of leakage current is attributable to a decrease of the maximum lateral electric field strength in the drain depletion region. An analysis of the leakage current characteristics in terms of carrier emission from grain-boundary traps implies that thermonic emission accompanied by thermally assisted tunneling could be the dominant mechanism in determining leakage current. |
| Databáze: | OpenAIRE |
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