Influence of Annealing Conditions on Dopant Activation of Si+ and Mg+ Implanted GaN

Autor:	Robert F. Davis, I.O. Usov, Thomas Gehrke, L.Ya. Krasnobaev, S. P. Withrow, Darren B. Thomson, Nalin R. Parikh, John D. Hunn, A. Suvkhanov
Rok vydání:	2000
Předmět:	Materials science Ion implantation Mechanics of Materials Annealing (metallurgy) Mechanical Engineering Analytical chemistry General Materials Science Dopant Activation Condensed Matter Physics Rutherford backscattering spectrometry
Zdroj:	Materials Science Forum. :1615-1618
ISSN:	1662-9752
DOI:	10.4028/www.scientific.net/msf.338-342.1615
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e68d18345aaea724bfcbe37cba7930d9 https://doi.org/10.4028/www.scientific.net/msf.338-342.1615 Zobrazit plný text záznamu