Single Event Transient Hardness of a New Complementary (npn $+$
| Autor: | G. Vizkelethy, Robert Eddy, John D. Cressler, Cheryl J. Marshall, Kirby Kruckmeyer, Jeff A. Babcock, Greg Cestra, Benyong Zhang, Edward P. Wilcox, Peng Cheng, Anuj Madan, S.D. Phillips, Tushar Thrivikraman, Paul W. Marshall |
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| Rok vydání: | 2010 |
| Předmět: |
Nuclear and High Energy Physics
Materials science business.industry Heterojunction bipolar transistor Electrical engineering Silicon on insulator Microbeam Silicon-germanium chemistry.chemical_compound Nuclear Energy and Engineering chemistry CMOS Single event upset Optoelectronics Electrical and Electronic Engineering business Radiation hardening Shift register |
| Zdroj: | IEEE Transactions on Nuclear Science. |
| ISSN: | 0018-9499 |
| DOI: | 10.1109/tns.2010.2085014 |
| Popis: | We report heavy-ion microbeam and total dose data for a new complementary (npn + pnp) SiGe on thick-film SOI technology. Measured transient waveforms from heavy-ion strikes indicate a significantly shortened single-event-induced transient current, while maintaining the total dose robustness associated with SiGe devices. Heavy-ion broad-beam data confirm a reduced single event upset (SEU) cross-section in a high-speed shift register circuit. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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