Colloidal quantum dot-silicon photodetector based on TCAD simulation
| Autor: | Jun Gou, Xiang Dong, Zhiming Wu, Yadong Jiang, Yuanlin Shi, Jun Wang |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
Materials science
Fabrication Silicon business.industry Doping Physics::Optics chemistry.chemical_element Photodetector Substrate (electronics) Condensed Matter::Mesoscopic Systems and Quantum Hall Effect chemistry.chemical_compound Semiconductor chemistry Quantum dot Optoelectronics Lead sulfide business |
| Zdroj: | AOPC 2020: Optical Sensing and Imaging Technology. |
| DOI: | 10.1117/12.2576295 |
| Popis: | Lead sulfide colloidal quantum dots, similar to the nanoscale crystals of most semiconductor crystals, are available in a variety of sizes, shapes, and compositions as well as to make different chemical molecular ligands to modify the surface of the quantum dots and to fabricate functional optoelectronic devices on a variety of substrate materials. The combination of silicon and colloidal quantum dots enables the fabrication of silicon-based compatible quantum dot optoelectronic devices over a wide range of applications. In this paper, the effects of channel doping concentration and channel length on the performance of silicon-based CQD/Si photodetectors are calculated and analyzed from the simulation method. The results show that a suitable doping concentration and a short channel length can improve the performance of the device, which provides a simulation basis for the fabrication of silicon-based compatible arrayed colloidal quantum dot photodetectors. |
| Databáze: | OpenAIRE |
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