| Autor: |
Christian Cloin, Michael Lercel, Christophe Smeets, Mark van de Kerkhof, Tjarko Adriaan Rudolf Van Empel, Andrei Mikhailovich Yakunin, Andrey Nikipelov, Vadim Banine, Ferdi van de Wetering |
| Rok vydání: |
2019 |
| Předmět: |
|
| Zdroj: |
Extreme Ultraviolet (EUV) Lithography X. |
| DOI: |
10.1117/12.2514874 |
| Popis: |
With the introduction of the NXE:3400B scanner, ASML has brought EUV to High-Volume Manufacturing (HVM). In this context, ASML is pursuing a dual-path approach towards zero reticle defectivity: EUV-compatible pellicle or zero particles towards reticle by advanced particle contamination control. This paper will focus on the latter approach of advanced particle contamination control and will show that we are able to reduce particle contamination towards reticle to a level that is compatible with HVM requirements for sub-10nm node lithography. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
