Selective Growth of Titanium Nitride on HfO2 across Nanolines and Nanopillars
| Autor: | John G. Ekerdt, Chris Kaihlanen, Zizhuo Zhang, Sonali N. Chopra |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
Materials science
General Chemical Engineering Nucleation chemistry.chemical_element Nanotechnology 02 engineering and technology General Chemistry 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences Titanium nitride 0104 chemical sciences Atomic layer deposition chemistry.chemical_compound chemistry X-ray photoelectron spectroscopy Etching (microfabrication) Transmission electron microscopy Materials Chemistry 0210 nano-technology Tin Nanopillar |
| Zdroj: | Chemistry of Materials. 28:4928-4934 |
| ISSN: | 1520-5002 0897-4756 |
| DOI: | 10.1021/acs.chemmater.6b01036 |
| Popis: | This work targets the area selective atomic layer deposition (AS-ALD) of TiN onto HfO2 for use as the word line in a memory device. Unlike other patterning processes, AS-ALD eliminates etching steps and also allows for growth of patterned films with precise thickness control. This study investigates how AS-ALD differs on planar and nonplanar surfaces. Using a combination of X-ray photoelectron spectroscopy, scanning electron microscopy, and transmission electron microscopy, we demonstrate a way to confer selectivity to a substrate using surface features. Self-assembled monolayers form defects at regions of high curvature, allowing nucleation of TiN films in ALD. This is in contrast to a treated planar surface with no features, which exhibits complete blocking of TiN up to a certain limit of ALD cycles. |
| Databáze: | OpenAIRE |
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