Novel Cell Metallization and Interconnect Technology for Improved Module Performance and Lower Installed System Cost
| Autor: | Brainard, B., Chari, A., De La Fuente, A., Murali, V., Prabhu, G., Rudin, A., Subbaraman, V., Tanner, D., Vyvoda, M., Xu, D. |
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| Jazyk: | angličtina |
| Rok vydání: | 2014 |
| Předmět: | |
| ISSN: | 1296-1299 |
| DOI: | 10.4229/eupvsec20142014-2cv.4.9 |
| Popis: | 29th European Photovoltaic Solar Energy Conference and Exhibition; 1296-1299 Historical advances in crystalline Si photovoltaic technology have tended to focus on efficiency improvements at the cell level, with less innovation put forward to improve the cost and performance of the module package itself. Intra- and inter-cell metallization and panel assembly typically employ a busbar/ribbon approach that attenuates efficiency gains at the cell level by virtue of high cell-to-module (CTM) resistive losses, and perpetuates the existence of heavy, rigid module designs. We have developed a novel metallization and cell interconnect technology, applied to standard crystalline Si cells, in the form of a flexible, monolithic grid, that addresses several fundamental shortcomings of traditional metallization schemes: elimination of up to 80% of the silver content found in traditional cells/modules while preserving mature contacting technology, simplification of cell interconnection and layup, large reduction in CTM losses, and the enablement of lighter and more flexible module designs, easing installation requirements and lowering total system costs. |
| Databáze: | OpenAIRE |
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