Correlation of threading screw dislocation density to GaN 2‐DEG mobility
| Autor: | Michael A. Mastro, Phani Gaddipati, C. R. Eddy, David J. Meyer, Jennifer K. Hite |
|---|---|
| Rok vydání: | 2014 |
| Předmět: |
Electron mobility
Materials science Condensed matter physics Wide-bandgap semiconductor Induced high electron mobility transistor Gallium nitride High-electron-mobility transistor Channelling Condensed Matter::Materials Science chemistry.chemical_compound chemistry Aluminium gallium nitride Electrical and Electronic Engineering Dislocation |
| Zdroj: | Electronics Letters. 50:1722-1724 |
| ISSN: | 1350-911X 0013-5194 |
| DOI: | 10.1049/el.2014.2401 |
| Popis: | A direct correlation between local threading screw dislocation densities in an aluminium gallium nitride/gallium nitride (AlGaN/GaN) heterostructure and the mobility of electrons in the two-dimensional electron gas (2-DEG) formed at the interface of that heterostructure is presented. Threading screw dislocations are directly imaged through open areas of Hall-effect test structures using electron channelling contrast imaging. The dislocation density measured for a given test structure is correlated to the mobility of the same structure. The results show a direct, negative correlation between mobility and screw/mixed dislocation density. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Plný text