Electro-thermal Modeling Method of Protection Power Diodes Using TCAD 3D / 2D approach
Autor: | Jean-Baptiste Kammerer, Luc Hebrard, Achraf Kaid, F. Roqueta |
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Rok vydání: | 2019 |
Předmět: |
010302 applied physics
Materials science business.industry 020208 electrical & electronic engineering 02 engineering and technology 01 natural sciences Finite element method Die (integrated circuit) Power (physics) 0103 physical sciences Thermal Limit (music) 0202 electrical engineering electronic engineering information engineering Optoelectronics business Intensity (heat transfer) Diode Voltage |
Zdroj: | 2019 25th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC). |
Popis: | This paper introduces a new model for predicting the electro-thermal behaviour and the failure of transient-voltage-suppression (TVS) diodes by finite elements with the TCAD suite Sentaurus from Synopsys©. A two-heat source description (3D simulation), based on the dissipated power distribution (2D simulation) in the diode is proposed to report on the non-uniformity of the dissipated power along the TVS junction. First, the properties of different numerically obtained diodes were successfully compared to experimental ones. 10/1000 μs electrical overstress was then applied for each diode and the corresponding maximum reached current and voltage confronted to experimental surge characterization data. The model provides a limit temperature and can be extended to different breakdown voltages and active surfaces at which failure happens. We found out that this limit is due to the melting of the die attach layer at a current intensity depending on the diode structure. |
Databáze: | OpenAIRE |
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