Systematic Approach to Time Division Multiplexed Si Etch Process Development
| Autor: | Linnell Martinez, Jason Plumhoff, Chris W. Johnson, Dave Johnson |
|---|---|
| Rok vydání: | 2013 |
| Předmět: | |
| Zdroj: | ECS Transactions. 50:11-20 |
| ISSN: | 1938-6737 1938-5862 |
| DOI: | 10.1149/05046.0011ecst |
| Popis: | In silicon-substrate processing, it is frequently a requirement to create high-aspect-ratio anisotropic profiles. To do this Time Division Multiplexed processes are almost exclusively used. By alternating between a passivation step and an etching step, high-rate anisotropic profiles can be created. Each step is independent from one another, and to create the desired profiles, proper balancing of the individual steps is critical. Therefore characterization of each of these process steps is necessary. This study will characterize the steps used in a TDM process. Metrics for both deposition and etching are presented. Typical thin film measurement equipment is used; however in-situ optical emission interferometry (OEI) is also utilized to give real time measurements. We will show how process parameters can affect not only the rate, but also the uniformity of each step. By characterizing these steps individually we will show how it is possible to determine a balanced starting process for different applications. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|