Atomic layer deposition of dielectrics for carbon-based electronics
| Autor: | Jin-Hyun Kim, Srikar Jandhyala |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
Silicon Graphene Metals and Alloys chemistry.chemical_element Nanotechnology Surfaces and Interfaces Carbon nanotube Dielectric Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Atomic layer deposition chemistry law Physical vapor deposition Materials Chemistry Carbon Graphene nanoribbons |
| Zdroj: | Thin Solid Films. 546:85-93 |
| ISSN: | 0040-6090 |
| Popis: | Carbon based nanomaterials like nanotubes and graphene have emerged as future generation electronic materials for device applications because of their interesting properties such as high-mobility and ability to carry high-current densities compared to conventional semiconductor materials like silicon. Therefore, there is a need to develop techniques to integrate robust gate dielectrics with high-quality interfaces for these materials in order to attain maximum performance. To date, a variety of methods including physical vapor deposition, atomic layer deposition (ALD), physical assembly among others have been employed in order to integrate dielectrics for carbon nanotube and graphene based field-effect transistors. Owing to the difficulty in wetting pristine surfaces of nanotubes and graphene, most of the ALD methods require a seeding technique involving non-covalent functionalization of their surfaces in order to nucleate dielectric growth while maintaining their intrinsic properties. A comprehensive review regarding the various dielectric integration schemes for emerging devices and their limitations with respect to ALD based methods along with a future outlook is provided. |
| Databáze: | OpenAIRE |
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