AlGaN based MEMS structures
| Autor: | Katja Tonisch, Bernd Hähnlein, S. Michael, Jörg Pezoldt, Peter Schaaf, Rolf Grieseler, Gernot Ecke |
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| Rok vydání: | 2014 |
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| Zdroj: | physica status solidi c. 11:239-243 |
| ISSN: | 1610-1642 1862-6351 |
| DOI: | 10.1002/pssc.201300153 |
| Popis: | AlxGa1-xN solid solutions were heteroepitaxially grown on 3C-SiC(111)/Si(111) pseudo substrates fabricated by low pressure chemical vapour deposition. Free standing doubly-clamped resonator bars and cantilevers were fabricated from these AlxGa1–xN layers. The resonance frequencies of the microelectromechanical structures were measured using electrostatic excitation and vibrometry at ambient conditions. The obtained resonance frequencies allowed a self consistent determination of the Young's modulus of the AlxGa1-xN layers and the residual strain in the free standing structures. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) |
| Databáze: | OpenAIRE |
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