Characteristics of Al doped ZnO co-sputtered InZnO anode films prepared by direct current magnetron sputtering for organic light-emitting diodes
| Autor: | Han-Ki Kim, Jung-Hyeok Bae |
|---|---|
| Rok vydání: | 2008 |
| Předmět: |
Materials science
business.industry Metals and Alloys chemistry.chemical_element Surfaces and Interfaces Substrate (electronics) Sputter deposition Surfaces Coatings and Films Electronic Optical and Magnetic Materials Anode Optics chemistry Sputtering Physical vapor deposition Materials Chemistry Optoelectronics Thin film business Indium Sheet resistance |
| Zdroj: | Thin Solid Films. 516:7866-7870 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2008.05.035 |
| Popis: | We studied the characteristics of aluminum zinc oxide (AZO) co-sputtered indium zinc oxide (IZO) anode films prepared by dual target direct current (DC) magnetron sputtering at room temperature in a pure Ar ambient environment. It was shown that the AZO co-sputtered IZO anode films exhibited comparable resistivity to pure IZO anode films eventhough AZO co-sputtered IZO has lower indium content. In addition, ultra-violet and visible spectrometer examination results showed that AZO co-sputtered IZO anodes have high transparency comparable to pure IZO anodes. Furthermore, AZO co-sputtered IZO shows a very smooth and featureless surface due to low substrate temperature during the co-sputtering process. Using X-ray photoelectron spectroscopy depth profile examination, it was observed that the increase in DC power of the AZO target resulted in a significant decrease of the relative indium element in the AZO co-sputtered IZO anode films. The current density–voltage–luminance ( J–V–L ) of the organic light light-emitting diodes (OLEDs) fabricated on an AZO co-sputtered IZO anode was similar to that of the OLED fabricated on a pure IZO anode. In addition, it was found that the J–V–L characteristics of the OLED were critically dependent on the sheet resistance of the AZO co-sputtered IZO anode. |
| Databáze: | OpenAIRE |
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