High pressure electrical transport measurements of Cs2MoS4 and KTbP2Se6 and X-ray diffraction study of Cs2MoS4
| Autor: | Peter K. Dorhout, V. Vijayakumar, B. K. Godwal, Alka B. Garg, Hans D. Hochheimer |
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| Rok vydání: | 2004 |
| Předmět: |
Diffraction
Equation of state Phase transition business.industry Chemistry Analytical chemistry General Chemistry Condensed Matter Physics Lattice constant Optics Absorption edge Electrical resistance and conductance Electrical resistivity and conductivity X-ray crystallography Materials Chemistry business |
| Zdroj: | Solid State Communications. 129:511-514 |
| ISSN: | 0038-1098 |
| Popis: | We report the results of electrical resistance measurements at high pressures on Cs 2 MoS 4 and KTbP 2 Se 6 . The results of high pressure X-ray diffraction study of Cs 2 MoS 4 are also presented. Interestingly, in the case of Cs 2 MoS 4 the resistance vs. pressure follows the behavior of the absorption edge vs. pressure obtained from our optical measurements lending further support to a direct–indirect band crossing. In the case of KTbP 2 Se 6 ,the phase transition at about 9.2 GPa is reflected in a sharp drop of the resistance. In addition we report the pressure dependence of the lattice constants as well as the equation of state of Cs 2 MoS 4 . |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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