| Autor: |
Hiroshi Ikenoue, Mitsuo Sakashita, Shigeaki Zaima, Kouta Takahashi, Osamu Nakatsuka, Masashi Kurosawa |
| Rok vydání: |
2018 |
| Předmět: |
|
| Zdroj: |
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM). |
| DOI: |
10.1109/edtm.2018.8421488 |
| Popis: |
We have investigated thermoelectric (TE) properties of poly-Ge}_{1-x}Sn}_{x} layers prepared with pulsed laser annealing in water. Even for polycrystalline layers, relatively high power factors of 0.37 and 0.92 mWK−2m−1 were obtained for p- and n-type poly-Ge}_{1-x}Sn}_{x} layers, respectively. The Ge}_{1-x}Sn}_{x}-based TE generator has been firstly fabricated blow the process temperature of 300 °C. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
