Oscillatory structure in radiation spectra of individual microplasmas in silicon carbide p-n-junctions

Autor:	S. M. Zubkova, L. P. Germash, A. M. Genkin, V. K. Genkina
Rok vydání:	2006
Předmět:	Microplasma Electroluminescence Radiation Condensed Matter Physics Spectral line Electronic Optical and Magnetic Materials Crystal chemistry.chemical_compound Amplitude chemistry Silicon carbide Emission spectrum Atomic physics Instrumentation
Zdroj:	The European Physical Journal Applied Physics. 33:161-167
ISSN:	1286-0050 1286-0042
DOI:	10.1051/epjap:2006023
Popis:	The breakdown electroluminescence spectra of individual microplasmas in a p - n -junction with microplasma breakdown, which was prepared on a 3C-SiC crystal, have been investigated. The clear periodic structure of an oscillatory nature, which was discovered first by the authors recently, with a period of about 0.16 eV was observed in the emission spectra of this microplasma. The oscillations were superimposed over the entire investigated spectral region between 1.8–4.7 eV. The amplitude of the oscillations amounted to 0.05–0.25 of the background radiation intensity. The characteristics of the oscillatory structure and of the background radiation have been separated and compared. It turned out that they depend in different ways on the temperature and on the sample-powering regime. It has been revealed that the oscillatory structure is associated apparently with the energy transition ( X 3 c − X 1 c ) in the conduction band.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e2fb278ca17fc67ef53e957961424885 https://doi.org/10.1051/epjap:2006023 Zobrazit plný text záznamu