Mutual intercropping-inspired co-silanization to graft well-oriented organosilane as adhesion promotion nanolayer for flexible conductors
| Autor: | Li-Syuan Chen, Yung-Sen Lin, Chih-Ming Chen, Ping-Heng Wu, Yi-Hsuan Chen, Yi-Hsiang Lai |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
Materials science
General Chemical Engineering Composite number 02 engineering and technology Substrate (electronics) Adhesion 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences Flexible electronics 0104 chemical sciences Chemical engineering Silanization Polymer substrate 0210 nano-technology Layer (electronics) Polyimide |
| Zdroj: | Journal of Industrial and Engineering Chemistry. 83:90-99 |
| ISSN: | 1226-086X |
| DOI: | 10.1016/j.jiec.2019.11.017 |
| Popis: | Surface metallization of polymer substrate and film adhesion are crucial to the development of flexible electronics. This study demonstrates the co-silanization engineering on the polyimide (PI) film by mutual intercropping of two organosilane molecules to improve their grafting orientability and enhance the adsorbability toward the PI substrate and loaded metal atoms. The mutual intercropping-inspired co-silanization engineering is implemented by using 3-[(trimethylsilyl)ethynyl]pyridine (TEP) as a supporting organosilane to spatially confine the grafting orientation of the supported aminosilane, 3-[2-(2-aminoethylamino)ethylamino]propyl-trimethoxysilane (ETAS), leading to the formation of a well-oriented organosilane composite nanolayer as adhesion promotion layer for flexible conductors. The flexible Cu conductor electrolessly deposited on the PI film by co-silanization shows improved adhesion strength (0.9 kgf/cm) compared to those based on mono-silanization (0.51 kgf/cm) and sputtered Ta/Cu (0.4 kgf/cm). Superior deformability (bendability) was also achieved for the co-silanized Cu/PI sample by retaining good electrical property after bending cycle up to 1000. |
| Databáze: | OpenAIRE |
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