Silicon fab-compatible contacts to n-InP and p-InGaAs for photonic applications
| Autor: | M. Swaidan, Siddharth Jain, Matthew N. Sysak, John E. Bowers |
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| Rok vydání: | 2012 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) Silicon business.industry Contact resistance Metallurgy chemistry.chemical_element Epitaxy Gallium arsenide chemistry.chemical_compound chemistry Aluminium Electrical resistivity and conductivity Optoelectronics Atomic ratio business Ohmic contact |
| Zdroj: | Applied Physics Letters. 100:201103 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.4714725 |
| Popis: | We report on silicon fab-compatible non-gold ohmic contacts to n-InP and p-InGaAs using Ti/W and Pd/Ge/W based metallization schemes where gold is replaced by aluminum as a thick probe layer. Specific contact resistivity of |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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