A 1.5 V full-swing BiCMOS dynamic logic gate circuit suitable for VLSI using low-voltage BiCMOS technology

Autor: Shr-Lung Chen, J.H. Lou, C.S. Chiang, Jui-Chang Kuo, K.W. Su
Rok vydání: 1995
Předmět:
Zdroj: IEEE Journal of Solid-State Circuits. 30:73-75
ISSN: 0018-9200
DOI: 10.1109/4.350190
Popis: This paper presents a 1.5 V full-swing BiCMOS dynamic logic gate circuit, based on a dynamic pull-down BiPMOS configuration, suitable for VLSI using low-voltage BiCMOS technology. With an output load of 0.2 pf, the 1.5 V full-swing BiCMOS dynamic logic gate circuit shows a more than 1.8 times improvement in speed as compared to the CMOS static one. >
Databáze: OpenAIRE