In situ X-ray photoelectron spectroscopy study: effect of inert Ar sputter etching on the core-level spectra of the CVD-grown tri-layer MoS2 thin films

Autor: K. Kamala Bharathi, M. Navaneethan, V. Jayaseelan, Senthil Kumar Eswaran, R. K. Kalaiezhily, Nitin Babu Shinde
Rok vydání: 2021
Předmět:
Zdroj: Journal of Materials Science: Materials in Electronics. 33:8741-8746
ISSN: 1573-482X
0957-4522
Popis: Atomically thin molybdenum disulfide (MoS2) thin films are a promising avenue of investigation due to its potential applications in modern nanoscale electronic devices. In this work, we present a systematic investigation of the effect of in situ argon-ion sputter etching on the core-level X-ray photoelectron spectroscopy (XPS) of the chemical vapor-deposited MoS2 thin films. Raman spectroscopy of the MoS2 reveals that the thin films are tri-layer samples. Photoluminescence spectrum of the tri-layer MoS2 consists of A- and B-exciton emission peaks at 1.85 and 1.99 eV, respectively. The core-level XPS spectra of the Mo-3d and S-2p levels of the tri-layer MoS2 were investigated for various in situ sputter etch time. The as-grown and 6 s sputter-etched MoS2 sample exhibited Mo-3d spin–orbit doublets corresponding to + 4 oxidation state of Mo. For the sputter etch time beyond 40 s, the sample exhibited + 6 oxidation states of molybdenum suggesting the presence of thin molybdenum oxide at the interface between MoS2 and sapphire. We have also observed mid oxidation states like Mo5+, which is attributed to the argon-ion sputter etch-induced sulfur-deficient mixed S–Mo–O and sub-stoichiometric phases.
Databáze: OpenAIRE