Deep Level Defects in CdTe

Autor:	V. B. Leigh, R. E. Kremer
Rok vydání:	1986
Předmět:	Photocurrent Materials science Solid-state physics chemistry Caesium Inorganic chemistry Doping Analytical chemistry chemistry.chemical_element Trapping Capacitance Crystallographic defect Cadmium telluride photovoltaics
Zdroj:	MRS Proceedings. 90
ISSN:	1946-4274 0272-9172
Popis:	We have used two complementary techniques to study deep trapping levels in CdTe single crystals. Samples of undoped, semi-insulating material and p-type material doped with phosphorus or cesium have been examined using transient spectroscopic techniques. Both capacitance transients (DLTS) and photocurrent transients (PITS) have been measured. The DLTS measurements showed several trapping levels in all of the specimens, while the PITS data usually revealed only a single level.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::e09d1a23f5bb9d5a390669be36fd6858 https://doi.org/10.1557/proc-90-241 Zobrazit plný text záznamu Full text from SpringerLink