Highly Scaled Strained Silicon-On-Insulator Technology for the 5G Era: Impact of Geometry and Annealing on Strain Retention and Device Performance of nMOSFETs
| Autor: | Sachin Yadav, Yuye Kang, Manuel Sellier, Yida Li, Xiao Gong, Maheswari Sivan, Walter Schwarzenbach, Dian Lei, Christophe Maleville, Ludovic Ecarnot, Eugene Y.-J. Kong, Bich-Yen Nguyen, Aaron Thean |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Silicon Annealing (metallurgy) business.industry Transistor Semiconductor device modeling chemistry.chemical_element Strained silicon 01 natural sciences Electronic Optical and Magnetic Materials law.invention Threshold voltage symbols.namesake chemistry CMOS law 0103 physical sciences symbols Optoelectronics Electrical and Electronic Engineering business Raman spectroscopy |
| Zdroj: | IEEE Transactions on Electron Devices. 66:2068-2074 |
| ISSN: | 1557-9646 0018-9383 |
| Popis: | Strained silicon-on-insulator (SSOI) is a promising platform for 5G, which will require both high-performance and low-power complementary metal–oxide–semiconductor (CMOS) devices. Hence, it is important to understand the behavior of strain in SSOI at deeply scaled dimensions. We thus present a simulation study of SSOI technology, where the strain profiles of “fins” with different dimensions and layer thicknesses are analyzed. We discover, for the first time, that a buried oxide (BOX) as thin as 10–15 nm is able to effectively memorize the strain. It is also able to retain the strain under annealing up to 1000 °C, a result verified by the Raman measurements. Such a thin BOX enables a good back-gate control for dynamic threshold voltage ( ${V}_{\text{t}}$ ) tuning of SSOI transistors. The ability to have a good performance enhancement (from strain), and dynamic ${V}_{\text{t}}$ tunability (from thin BOX) makes SSOI favorable for 5G mixed-signal applications. |
| Databáze: | OpenAIRE |
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