Ion energy distributions and the density of CH3 radicals in a low pressure inductively coupled CH4/H2 plasma used for nanocrystalline diamond deposition
| Autor: | Seiichiro Matsumoto, Shojiro Komatsu, Katsuyuki Okada |
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| Rok vydání: | 2003 |
| Předmět: | |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 21:1988-1992 |
| ISSN: | 1520-8559 0734-2101 |
| DOI: | 10.1116/1.1621404 |
| Popis: | Ion energy distributions (IEDs) and the density of CH3 radicals (n) in a 13.56 MHz radio frequency (rf) low pressure inductively coupled CH4/H2 plasma used for nanocrystalline diamond deposition have been investigated with a quadrupole mass spectrometer. The energy distributions of positive ions were measured in a CH4/H2 plasma with 50 mTorr of the gas pressure at 500 W of the plasma input power, and were compared with those of an Ar plasma. We have found that the IEDs of Ar+, CH4+, and C2H5+ have a nearly monoenergetic peak, and a hump due to a small degree of capacitive coupling. The plasma potentials obtained from the peaks are consistent with the previously reported values measured with a Langmuir probe. On the other hand, the IEDs of H+, H2+, and H3+ have a clear asymmetric double peak due to the modulation of rf driven glow discharge. The n monotonously increases with increasing pressure. The n indicates that CH3 radicals are main precursors for the growth of nanocrystalline diamond. The estimated s... |
| Databáze: | OpenAIRE |
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