300-mm Production-Worthy Magnetically Enhanced Non-Bosch Through-Si-Via Etch for 3-D Logic Integration
| Autor: | Wei Wang, Weng Hong Teh, T Saito, Sitaram Arkalgud, Kaoru Maekawa, R. Caramto, Thenappan Chidambaram, K. Maruyama |
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| Rok vydání: | 2010 |
| Předmět: |
Materials science
Silicon business.industry Plasma etcher Electrical engineering chemistry.chemical_element Integrated circuit Condensed Matter Physics Aspect ratio (image) Industrial and Manufacturing Engineering Electronic Optical and Magnetic Materials law.invention chemistry law Etching Optoelectronics Wafer Undercut Capacitively coupled plasma Electrical and Electronic Engineering business |
| Zdroj: | IEEE Transactions on Semiconductor Manufacturing. 23:293-302 |
| ISSN: | 1558-2345 0894-6507 |
| DOI: | 10.1109/tsm.2010.2046083 |
| Popis: | We report a process development route toward 300-mm production-worthy non-Bosch through-silicon-via (TSV) etch with critical dimensions between 1-5 ?m and aspect ratios up to 20:1 for 3-D logic applications. The etch development was performed on an experimental alpha-tool: a magnetically enhanced capacitively coupled plasma etcher with a dipole ring magnet that aims to capture the strengths (anisotropicity, profile uniformity) while eliminating the weaknesses (scalloping, undercut, residues) of a nominal Bosch process. Key factors contributing to the control of sidewall taper and roughness, etched TSV volume and depth, mask undercut, local bowing effects, and within wafer (WIW) center-to-edge depth and profile uniformity were evaluated. TSVs with nominal sizes of 5 × 25 ?m, 5 × 40 ?m and 1 × 20 ?m with less than 1% WIW nonuniformity, negligible silicon scalloping/mask undercut, and good profile anisotropicity were developed. Up to 3 × 20 ?m and 5 × 25 ?m void-free Cu-filled TSVs were demonstrated with both vertical TSVs and tapered TSVs. |
| Databáze: | OpenAIRE |
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