Barrier reduction and current transport mechanism in Pt/n-InP Schottky diodes using atomic layer deposited ZnO interlayer
| Autor: | Hogyoung Kim, Myeong Jun Jung, Byung Joon Choi |
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| Rok vydání: | 2021 |
| Předmět: |
Materials science
Passivation business.industry Schottky barrier Schottky diode Condensed Matter Physics Thermionic field emission Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Dipole State density Optoelectronics Electrical and Electronic Engineering Current (fluid) business Layer (electronics) |
| Zdroj: | Journal of Materials Science: Materials in Electronics. 32:22792-22802 |
| ISSN: | 1573-482X 0957-4522 |
| DOI: | 10.1007/s10854-021-06758-w |
| Popis: | Modification of interface properties in Pt/n-InP Schottky contacts with atomic layer deposited ZnO interlayer (IL) (5 and 10 nm) has been carried out and the electrical properties were investigated using current–voltage (I–V) and capacitance–voltage (C–V) techniques. The insertion of ZnO IL in the Pt/n-InP interface reduced the effective barrier height. The barrier heights from C–V method were higher with respect to those from I–V method. The interface state density for 5 nm thick ZnO was higher than that for 10 nm thick ZnO. The barrier heights according to thermionic field emission model showed much closer to those from C–V method. Surface passivation and interfacial dipole were suggested to modulate the Schottky barrier at the Pt/ZnO/n-InP interface. |
| Databáze: | OpenAIRE |
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