Properties of metamorphic materials and device structures on GaAs substrates

Autor:	C.S. Whelan, C. Xu, R.E. Leoni, Jae-Hyung Jang, P.F. Marsh, William E. Hoke, Y. Zhang, Ilesanmi Adesida, A. Torabi, T. D. Kennedy, K. C. Hsieh, S.M. Lardizabal
Rok vydání:	2003
Předmět:	Photoluminescence Materials science business.industry Transconductance Transistor High-electron-mobility transistor Condensed Matter Physics Photodiode law.invention Inorganic Chemistry Responsivity Optics law Materials Chemistry Optoelectronics business Quantum well Molecular beam epitaxy
Zdroj:	Journal of Crystal Growth. 251:804-810
ISSN:	0022-0248
Popis:	Metamorphic layer structures grown on GaAs substrates have been characterized and fabricated into high quality electrical and optical devices. The root mean square surface roughness of the metamorphic films is
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::df2272d2578368027d998b1a578ae63a https://doi.org/10.1016/s0022-0248(02)02374-6 Zobrazit plný text záznamu Full Text from ScienceDirect