Effects of grain size and preferred orientation on the electromigration lifetime of Al‐based layered metallization

Autor:	Kenji Hinode, Osamu Deguchi, Seiichi Kondo
Rok vydání:	1995
Předmět:	Interconnection Materials science Metallurgy Refractory metals Crystal orientation General Physics and Astronomy chemistry.chemical_element Electromigration Grain size chemistry Aluminium Orientation (geometry) Composite material Layer (electronics)
Zdroj:	Journal of Applied Physics. 78:6534-6538
ISSN:	1089-7550 0021-8979
Popis:	Ten kinds of Al‐based layered metallizations were fabricated and investigated to find out how a refractory metal underlayer affects the crystallographic characteristics of an Al layer and, in consequence, the electromigration resistance of the metallization. Both Al grain size and Al (111) preferred orientation were compared with electromigration lifetime by using three interconnect linewidths. A W group underlayer was found to change the Al grain size while maintaining the preferred orientation. A WN underlayer, in particular, increases the Al grain size more than a SiO2 underlayer does, resulting in long electromigration lifetime. A Ti group underlayer, in contrast, improves Al (111) preferred orientation while maintaining the grain size. The crystallographic characteristics of the layered interconnects were plotted on constant‐lifetime‐line figures indicating the direction of the next layered metallization.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::de7553b71fd218336ee843bf60cbc5a9 https://doi.org/10.1063/1.360539 Zobrazit plný text záznamu