The two timescales in the charge trapping mechanism for the hysteresis behavior in graphene field effect transistors
| Autor: | Mao Dacheng, Muhammad Asif, Shi Jingyuan, Songang Peng, Xinnan Huang, Zhang Dayong, Zhi Jin, Shaoqing Wang |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Work (thermodynamics) Materials science Condensed matter physics Graphene Polarity (physics) Oxide Time constant Nanotechnology 02 engineering and technology Trapping 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound Hysteresis chemistry law 0103 physical sciences Electrical and Electronic Engineering 0210 nano-technology Voltage |
| Zdroj: | Journal of Materials Science: Materials in Electronics. 27:9847-9852 |
| ISSN: | 1573-482X 0957-4522 |
| DOI: | 10.1007/s10854-016-5052-x |
| Popis: | To understand the hysteresis phenomenon in the transfer characteristic curve of graphene field effect transistor is crucial to develop new graphene based sensors and memory devices. We investigated the hysteresis through a charging and discharging procedure and found that there exist two time constants with different timescales in the trapping mechanism. A fast trapping at the interface with a time constant of 0.68 s and a slow trapping in the bulk oxide with a time constant of 23.85 s were presented in our work. By identifying a linear relation between the interface trap densities and the gate voltage, we also found that the release of trapped charges was decided by the magnitude decrease of gate voltage instead of the voltage’s polarity switch. Based on the findings, a bi-resistive state memory prototype with a shorter charging time was realized at last. |
| Databáze: | OpenAIRE |
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