BTO-based O-band Sub-Volt CMOS Compatible Plasmonic Racetrack Modulator on Si3N4

Autor:	Dimitrios Chatzitheocharis, Dimitra Ketzaki, Georgios Patsamanis, Konstantinos Vyrsokinos
Rok vydání:	2022
Zdroj:	Frontiers in Optics + Laser Science 2022 (FIO, LS).
DOI:	10.1364/fio.2022.jw4a.59
Popis:	We numerically demonstrate a tri-layer CMOS SiN-plasmonic BTO racetrack modulator for the O-band. The device exhibits 3 dB insertion loss, 66.43 GHz resonance 3dB-bandwidth and an extinction ratio higher than 28 dB for 0.5Vpp voltage.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::dc60ecccf4176e73164113ede64fbb17 https://doi.org/10.1364/fio.2022.jw4a.59 Zobrazit plný text záznamu