Effect of atomic silicon and germanium beams on the growth kinetics of Si1 – x Ge x layers in Si–GeH4 molecular beam epitaxy
| Autor: | L. K. Orlov, S. V. Ivin, V. M. Fomin |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Physics and Astronomy (miscellaneous) Silicon Analytical chemistry chemistry.chemical_element Germanium 02 engineering and technology 021001 nanoscience & nanotechnology Epitaxy 01 natural sciences chemistry.chemical_compound chemistry Germane 0103 physical sciences Saturation (graph theory) 0210 nano-technology Molecular beam Molecular beam epitaxy Bar (unit) |
| Zdroj: | Technical Physics. 62:449-459 |
| ISSN: | 1090-6525 1063-7842 |
| Popis: | The steady-state kinetics of growth of Si1 – xGex layers in one version of hybrid molecular beam epitaxy with a molecular germane source and a sublimating silicon bar has been studied. It has been demonstrated that the processes of capture of hydride molecule radicals by the epitaxial surface and their subsequent decomposition must be taken into account in the analysis of growth kinetics. The comparison of experimental data with the results of kinetic analysis has revealed a close match between them. At low germane pressures \({P_{Ge{H_4}}}\) < 0.5 mTorr, the nature of the growth process is defined exclusively by the specifics of interaction between the molecular beam of Ge monohydride with the growth surface. The influence of the atomic Ge beam from the Si source only manifests at germane pressures exceeding 1 mTorr. Under these conditions, the fluxes of Ge and Si atoms from the sublimating Si source become equal, and the concentration of germyl molecules on the surface reaches saturation. The observed increase in the \({V_{Ge{H_3}}}\) parameter is associated with the activating influence of the flux of silicon atoms from the sublimating source on the decomposition of molecules. |
| Databáze: | OpenAIRE |
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