High-temperature lasing in a microring laser with an active region based on InAs/InGaAs quantum dots
| Autor: | I. A. Slovinsky, N. V. Kryzhanovskaya, Mikhail V. Maximov, A. E. Zhukov, E. M. Arakcheeva, A. V. Savel'ev, A. M. Nadtochy, S. I. Troshkov, Andrey A. Lipovskii, Yu. M. Zadiranov, M. M. Kulagina |
|---|---|
| Rok vydání: | 2012 |
| Předmět: |
Materials science
Condensed Matter::Other business.industry Physics::Optics Ring laser Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Laser Ring (chemistry) Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Condensed Matter::Materials Science Wavelength Quantum dot Quantum dot laser law Optoelectronics business Lasing threshold Free spectral range |
| Zdroj: | Semiconductors. 46:1040-1043 |
| ISSN: | 1090-6479 1063-7826 |
| Popis: | Lasing at a wavelength of >1.3 μm has been achieved at temperatures of up to 380 K in a ring microlaser (diameter of 6 μm) with an active region based on InAs/InGaAs quantum dots. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|