Improvement of Oxidation-Induced Ge Condensation Method by H+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SGOI

Autor:	Hiroyasu Hagino, Masanobu Miyao, Masaharu Ninomiya, Toyotsugu Enokida, Taizoh Sadoh, Masahiko Nakamae, Ryo Matsuura
Rok vydání:	2004
Předmět:	Materials science Annealing (metallurgy) Two step Nanotechnology Engineering physics
Zdroj:	Extended Abstracts of the 2004 International Conference on Solid State Devices and Materials.
DOI:	10.7567/ssdm.2004.c-8-2
Popis:	Improvement of Oxidation-Induced Ge Condensation Method by H+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SiGe-on-Insulator Taizoh Sadoh∗, Ryo Matsuura, Masaharu Ninomiya, Masahiko Nakamae, Toyotsugu Enokida, Hiroyasu Hagino and Masanobu Miyao Department of Electronics, Kyushu University, 6-10-1 Hakozaki, Fukuoka 812-8581, Japan SUMCO, 314 Nishisangao, Noda, Chiba 278-0015, Japan SUMCO, 2201 Oaza Kamioda, Kohoku-cho, Kishima-gun, Saga 849-0597, Japan Analysis & Evaluation Center, Fukuryo Semicon Engineering Corporation, 1-1-1 ImajukuHigashi, Fukuoka 819-0192, Japan
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d9d5a5c4fdf7965282d53f1d4848f0d5 https://doi.org/10.7567/ssdm.2004.c-8-2 Zobrazit plný text záznamu