Interface Doping of MNOS Transistors
| Autor: | C A Neugebauer, M M Barnicle |
|---|---|
| Rok vydání: | 1978 |
| Předmět: |
Hardware_MEMORYSTRUCTURES
Materials science Dopant business.industry Interface (computing) Transistor Doping chemistry.chemical_element Hardware_PERFORMANCEANDRELIABILITY Tungsten law.invention chemistry Vacuum deposition law Hardware_INTEGRATEDCIRCUITS Electronic engineering Optoelectronics business Radiation hardening Quantum tunnelling |
| DOI: | 10.21236/ada068493 |
| Popis: | The objective of this program is threefold: First to survey interface dopants suitable for use in MNOS nonvolatile storage transistors, to identify optimum dopant materials, concentrations, and deposition techniques, and to evaluate the write characteristics, retention, and endurance of interface doped MNOS devices by accelerated test methods. Second, to investigate the feasibility of fabricating n-channel interface doped MNOS transistors, both memory and stable gate and assess device yields. Third, to investigate their radiation hardness toward total dose ionizing radiation. |
| Databáze: | OpenAIRE |
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