| Autor: |
Yunzhe Ma, Yi-Shin Yeh, Triveni S. Rane, Carlos Nieva, Jeremy Wahl, Surej Ravikumar, Guannan Liu, Jessica C. Chou, Sell Bernhard, Mark Armstrong, Saurabh Morarka, Vijaya B. Neeli, Mauricio Marulanda, Nathan Monroe, Said Rami, Hui Fu, Dyan Ali, L. Paulson, Hyung-Jin Lee, Sameer Joglekar, Thomas C. Brown, Jabeom Koo, Jeffrey Garrett, Ruonan Han, Qiang Yu, Georgios C. Dogiamis, Eric Karl, James Waldemer, Ying Zhang |
| Rok vydání: |
2020 |
| Předmět: |
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| Zdroj: |
2020 IEEE International Electron Devices Meeting (IEDM). |
| DOI: |
10.1109/iedm13553.2020.9372105 |
| Popis: |
This paper presents the recent mmWave and sub-THz oriented technology developments as part of RF design-technology co-optimization (DTCO) efforts in Intel 22nm FinFET process (22FFL). Several back-end-of-line (BEOL) and front-end-of-line (FEOL) improvements have been implemented for high frequency applications. In the newly developed BEOL, ExpressVia is introduced, which allows direct transistor connection to thick metal. Continuous via and 3+1 thick metal layers are enabled for design flexibility. The high performance RF transistor (RF HP) is optimized with the new BEOL and characterized at top metal. Additional process improvements in high power RF device (HyPowerFF) and varactors are also implemented. These BEOL and FEOL improvements enable high performance, innovative mmWave and sub-THz circuits and systems. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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