A Brief Study on Silicon Crystal Materials as a Mid-IR Raman Amplifier
| Autor: | Xiao Han Chen, Z. H. Cong, Jian Li He, Hui Hua Xu, Q.P. Wang, Xingyu Zhang, Cong Wang, Zhaojun Liu |
|---|---|
| Rok vydání: | 2012 |
| Předmět: |
Materials science
Raman amplification Silicon business.industry General Engineering Physics::Optics chemistry.chemical_element Laser pumping Laser law.invention symbols.namesake Raman cooling Optics Raman laser chemistry law symbols Physics::Atomic Physics Coherent anti-Stokes Raman spectroscopy business Raman spectroscopy |
| Zdroj: | Advanced Materials Research. 531:185-188 |
| ISSN: | 1662-8985 |
| DOI: | 10.4028/www.scientific.net/amr.531.185 |
| Popis: | We consider a bulk silicon crystal as a Mid-IR Raman amplifier and study its Raman amplification. A Raman amplifier is established when an intense pump laser pulse and a Raman laser pulse pass through one silicon simultaneously, with good spatial and temporal overlap. Considering the situation of pumping wavelength at 2.94 μm achievable by using an Er:YAG laser and Raman laser wavelength at 3.47 μm with the 521 cm-1 Raman shift, the properties of the output amplified Raman laser are investigated by numerically solving the coupled transfer equations. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|