Spectroscopic ellipsometry study on initial growth stages of GaN films on GaAs(0 0 1) in low-pressure MOVPE

Autor:	Y. Taniyasu, Y. Kato, Norio Shimoyama, A.W. Jia, Kiyoshi Takahashi, Ryouichi Ito, Megumi Kurihara, M. Kobayashi, Akihiko Yoshikawa
Rok vydání:	1998
Předmět:	Atomic force microscopy Annealing (metallurgy) Analytical chemistry Heterojunction Condensed Matter Physics Layer thickness Monomethylhydrazine Inorganic Chemistry chemistry.chemical_compound chemistry Materials Chemistry Spectroscopic ellipsometry Metalorganic vapour phase epitaxy Thin film
Zdroj:	Journal of Crystal Growth. :305-309
ISSN:	0022-0248
DOI:	10.1016/s0022-0248(98)00271-1
Popis:	Initial growth stages of cubic GaN (c-GaN) films on GaAs(001) in low-pressure MOVPE were studied by spectroscopic ellipsometry. The GaN buffer layer was deposited at 500°C and was then annealed at 700°C with H 2 /monomethyl-hydrazine (MM Hy) ambient. Spectroscopic ellipsometry revealed that the buffer layer thickness was increased and the surface was roughened during the annealing process. The change of surface morphology was also confirmed by the atomic force microscopy measurement. These observations would be associated with the nitridation of the GaAs substrate by the ambient MM Hy and re-crystallization of the GaN buffer layer. Spectroscopic ellipsometry is a helpful technique to study the initial growth stages of GaN films on GaAs substrates.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d815a2c00035cecb42fe7bd1a646730d https://doi.org/10.1016/s0022-0248(98)00271-1 Zobrazit plný text záznamu Full Text from ScienceDirect