Mathematical modelling of the interstitialcy diffusion mechanism

Autor:	T. G. Rogers, T. E. Sharp, John R. King, B. Tuck
Rok vydání:	1995
Předmět:	Semiconductor Continuum (topology) Mechanism (philosophy) Impurity business.industry General Medicine Limit (mathematics) Statistical physics Crystal structure Diffusion (business) business Mathematics
Zdroj:	Proceedings of the Royal Society of London. Series A: Mathematical and Physical Sciences. 450:623-649
ISSN:	2053-9177 0962-8444
DOI:	10.1098/rspa.1995.0104
Popis:	We consider the diffusion of an impurity through a semiconductor by an interstitialcy mechanism. The model is initially formulated as a system of differential-difference equations which account for the discrete nature of the crystal lattice. The corresponding continuum limit is derived and some numerical and asymptotic results are presented.
Databáze:	OpenAIRE
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