Control of the chemical composition of silicon carbon nitride films formed from hexamethyldisilazane in H2/NH3 mixed gas atmospheres by hot-wire chemical vapor deposition
| Autor: | Hiroto Mori, Fumihiro Morishita, Akira Izumi, Yūki Katamune |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Silicon Hydrogen Metals and Alloys chemistry.chemical_element 02 engineering and technology Surfaces and Interfaces Chemical vapor deposition 021001 nanoscience & nanotechnology 01 natural sciences Nitrogen Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound Ammonia chemistry Chemical engineering X-ray photoelectron spectroscopy 0103 physical sciences Materials Chemistry 0210 nano-technology Carbon nitride Chemical composition |
| Zdroj: | Thin Solid Films. 695:137750 |
| ISSN: | 0040-6090 |
| Popis: | Silicon carbon nitride (SiCN) films were deposited by hot-wire chemical vapor deposition using hexamethyldisilazane (HMDS) as the single source gas diluted in ammonia (NH3) and hydrogen (H2) gas mixtures. The chemical composition of the SiCN films was controlled by adjusting the NH3/H2 flow rate ratio. X-ray photoelectron spectroscopy measurements revealed that the carbon and nitrogen contents of the films were controllable from 10 to 35 at.%, while the silicon content remained almost constant at 45 at.%. Although the homogeneity of the SiCN films deposited using HMDS diluted only with H2 degraded with increasing stage temperature from 400 to 800 °C, it was improved by replacing H2 with NH3. Upon introducing NH3, the nitrogen content increased as carbon content decreased accompanied by the replacement of Si C and C C bonds by Si N, N H, and C H bonds, which led to the deterioration of the mechanical properties of the SiCN films. |
| Databáze: | OpenAIRE |
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