| Popis: |
In this paper, the compact drain current model of 15-nm FinFET is proposed in ballistic transport regime. Based on the Lundstrom's ballistic transport model, the proposed model is formulated for the improvement in both subthreshold and inversion region with channel length variation, including short channel effects and channel length modulation. The model can also capture the degeneracy of electrons using the empirical injection velocity. The proposed model is implemented in BSIM-CMG 108.0 and verified using the commercial TCAD modeling and simulation with the channel length variation. |
