Study of Thermal Stability of Ni Silicide using Ni-V Alloy
| Autor: | Won-Jae Lee, Soon-Young Oh, Jin-Suk Wang, Soon-Yen Jung, Shi-Guang Li, Yeong-Cheol Kim, Ying-Ying Zhang, Zhun Zhong, Hi-Deok Lee, Ga-Won Lee |
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| Rok vydání: | 2008 |
| Předmět: |
Phase transition
Materials science Metallurgy Alloy Vanadium chemistry.chemical_element engineering.material Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Silicide engineering Thermal stability Wafer Electrical and Electronic Engineering Composite material Tin Sheet resistance |
| Zdroj: | Transactions on Electrical and Electronic Materials. 9:47-51 |
| ISSN: | 1229-7607 |
| DOI: | 10.4313/teem.2008.9.2.047 |
| Popis: | In this paper, thermal stability of Nickel silicide formed on p-type silicon wafer using Ni-V alloy film was studied. As compared with pure Ni, Ni-V shows better thermal stability. The addition of Vanadium suppresses the phase transition of NiSi to $NiSi_2$ effectively. Ni-V single structure shows the best thermal stability compared with the other Ni-silicide using TiN and Co/TiN capping layers. To enhance the thermal stability up to 650℃ and find out the optimal thickness of Ni silicide, different thickness of Ni-V was also investigated in this work. Stable sheet resistance was obtained through Ni-V single strucure with optimal Ni-V thickness. |
| Databáze: | OpenAIRE |
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