Photoelectrical Properties of GaAs/AlGaAs p-n Heterojunctions under Infrared Laser Illumination
| Autor: | G. Valu is, J. Gradauskas, D. Seliuta, A. Su iedelis, S. A montas, A. ilenas |
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| Rok vydání: | 1999 |
| Předmět: |
Photocurrent
Materials science business.industry Infrared Far-infrared laser Heterojunction Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Signal Atomic and Molecular Physics and Optics Condensed Matter::Materials Science Light intensity Optics Optoelectronics Infrared detector Homojunction business Mathematical Physics |
| Zdroj: | Physica Scripta. :170 |
| ISSN: | 0031-8949 |
| DOI: | 10.1238/physica.topical.079a00170 |
| Popis: | We report on results of an experimental study of photoresponse, induced by pulsed CO2 laser in GaAs/AlGaAs p-n heterojunction and compare with that of GaAs homojunction. We show that the signal originates from free carrier heating in the structure. The dependence of the photocurrent on light intensity was established to be linear in the measured intensity range. Moreover, we demonstrate the possibility to employ this phenomenon in devices such as infrared detector and infrared photocapacitor as well, which successful operation does not require any cryogenic cooling. |
| Databáze: | OpenAIRE |
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