First Demonstration of Ge2Sb2Te5-Based Superlattice Phase Change Memory with Low Reset Current Density (~3 MA/cm2) and Low Resistance Drift (~0.002 at 105°C)
| Autor: | Asir Intisar Khan, Christopher Perez, Xiangjin Wu, Byoungjun Won, Kangsik Kim, Heungdong Kwon, Pranav Ramesh, Kathryn M. Neilson, Mehdi Asheghi, Krishna Saraswat, Zonghoon Lee, Il-Kwon Oh, H.-S. Philip Wong, Kenneth E. Goodson, Eric Pop |
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| Rok vydání: | 2022 |
| Zdroj: | 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits). |
| Databáze: | OpenAIRE |
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