An analytical charge-based capacitance model for double-gate tunnel FETs
| Autor: | Seyed Ebrahim Hosseini, Malihe Zare, Mahdi Gholizadeh |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Physics Iterative and incremental development Gaussian Spice Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics Topology 01 natural sciences Capacitance symbols.namesake Terminal (electronics) 0103 physical sciences Hardware_INTEGRATEDCIRCUITS symbols General Materials Science Transient (oscillation) Electrical and Electronic Engineering Poisson's equation 0210 nano-technology Hardware_LOGICDESIGN Electronic circuit |
| Zdroj: | Superlattices and Microstructures. 152:106836 |
| ISSN: | 0749-6036 |
| DOI: | 10.1016/j.spmi.2021.106836 |
| Popis: | This paper presents an explicit capacitance model with closed-form expressions for double gate tunnel FETs (DG-TFETs). The model is based on a 2-D potential approach, considering the mobile charges in the solution. This model uses a quasi-static approach to obtain terminal capacitances. Charges associated to each electrode are calculated by adopting the Gaussian box, and then the critical terminal capacitances including the input capacitance and the Miller capacitance are analytically expressed. To derive the model, neither fitting parameter nor iterative process is used which means the proposed model can be used for SPICE modeling of TFETs. The presented model provides a physics insight to analyze transient performance in TFET-based circuits. The proposed model is in good agreement with TCAD simulation results. The model is validated for various structural and bias parameters. |
| Databáze: | OpenAIRE |
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