Autor: |
V. G. Beshenkov, Hadis Morkoç, N. Izyumskaya, Andrey Bakin, V. Avrutin, Ümit Özgür, F. Reuss, A.N. Pustovit, Hosun Lee, A. Che Mofor, Andreas Waag, Wladimir Schoch, Abdelhamid El-Shaer |
Rok vydání: |
2006 |
Předmět: |
|
Zdroj: |
Superlattices and Microstructures. 39:291-298 |
ISSN: |
0749-6036 |
DOI: |
10.1016/j.spmi.2005.08.051 |
Popis: |
We studied the structural and electronic properties of Zn1−xMnxO ( 0 x 0.5 ) layers grown by peroxide molecular beam epitaxy. Hall effect measurements showed that the layers were highly resistive, pointing to strong electrical compensation of the Zn1−xMnxO films by Mn incorporation. The lattice parameter c was found to increase linearly with increasing x for low Mn concentrations and tended to saturate for heavily doped films ( x ≥ 0.2 ) , suggesting a possible second-phase precipitation. Optical transmission measurements revealed an increase in the band gap of Zn1−xMnxO and an enhancement of the broad below-band-gap absorption associated with Mn ions with increasing Mn content. However, no blueshift in the near-band-edge emission was detected in the photoluminescence spectra. |
Databáze: |
OpenAIRE |
Externí odkaz: |
|