Popis: |
Dielectric relaxation characteristics of Se 90 Ge 10− x In x ( x = 2,4 and 6) have been studied. The frequency dependence of the dielectric loss tangent for the three samples annealed at temperatures 393, 403 and 413 K for two periods of annealing time has been carried out. The activation energy of relaxation ( E r ) is found to be highly affected by the addition of In and it is also a function of the annealing process. Thermodynamic functions such as enthalpy (Δ H ), free energy (Δ F ) and the change in entropy (Δ S ) have been calculated as a function of annealing temperature and annealing time. |